DHARMADASA, I, MADUGU, Mohammad L., OLUSOLA, Olajide I., ECHENDU, Obi K, FAUZI, Fijay, DISO, Dahiru, WEERADINGHE, Ajith, DHARMADASA, Ruvini, LAVERY, Brandon, JASINSKI, Jacek B., KRENTSEL, Tatiana A. and SUMANASEKERA, Gamini (2017). Electroplating of CdTe thin films from cadmium sulphate precursor and comparison of layers grown by 3-electrode and 2-electrode systems. Coatings, 7 (2), p. 17. [Article]
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14817:105327
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Dharmadasa - Electroplating of CdTe Thing films from calcium sulphate (AM).pdf - Accepted Version
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Dharmadasa - Electroplating of CdTe Thing films from calcium sulphate (AM).pdf - Accepted Version
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Dharmadasa - Electroplating of CdTe Thing films from calcium sulphate (VoR).pdf - Published Version
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Dharmadasa - Electroplating of CdTe Thing films from calcium sulphate (VoR).pdf - Published Version
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Abstract
Electrodeposition of CdTe thin films was carried out from the late 1970s using the
cadmium sulphate precursor. The solar energy group at Sheffield Hallam University has carried out
a comprehensive study of CdTe thin films electroplated using cadmium sulfate, cadmium nitrate and
cadmium chloride precursors, in order to select the best electrolyte. Some of these results have been
published elsewhere, and this manuscript presents the summary of the results obtained on CdTe layers
grown from cadmium sulphate precursor. In addition, this research program has been exploring the
ways of eliminating the reference electrode, since this is a possible source of detrimental impurities,
such as K+ and Ag+ for CdS/CdTe solar cells. This paper compares the results obtained from CdTe
layers grown by three-electrode (3E) and two-electrode (2E) systems for their material properties and
performance in CdS/CdTe devices. Thin films were characterized using a wide range of analytical
techniques for their structural, morphological, optical and electrical properties. These layers have
also been used in device structures; glass/FTO/CdS/CdTe/Au and CdTe from both methods have
produced solar cells to date with efficiencies in the region of 5%–13%. Comprehensive work carried
out to date produced comparable and superior devices fabricated from materials grown using
2E system.
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