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Number of items: 4.

Article

EHIASARIAN, Arutiun, PETROV, I. and WEN, J. G. (2007). Interface microstructure engineering by high power impulse magnetron sputtering for the enhancement of adhesion. Journal of applied physics, 101 (5), 054301-1. [Article]

EVANS-FREEMAN, J. H., ABDELGADER, N. and KAN, P. Y. Y. (2002). High resolution deep level transient spectroscopy studies of the vacancy-oxygen and related defects in ion-implanted silicon. Journal of applied physics, 92 (7), 3755-3760. [Article]

GAD, M. and EVANS-FREEMAN, J. H. (2002). High resolution minority carrier transient spectroscopy of Si/SiGe/Si quantum wells. Journal of applied physics, 92 (9), 5252-5258. [Article]

VERNON-PARRY, K. D., EVANS-FREEMAN, J., HAWKINS, I. D., DAWSON, P. and PEAKER, A. R. (2001). Effect of dislocations on the photoluminescence decay of 1.54 μm emission from erbium-doped silicon. Journal of applied physics, 89 (5), 2715-2719. [Article]

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