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Jump to: E | G | V

Number of items: 4.

E

EHIASARIAN, Arutiun, PETROV, I. and WEN, J. G. (2007). Interface microstructure engineering by high power impulse magnetron sputtering for the enhancement of adhesion. Journal of applied physics, 101 (5), 054301-1.

EVANS-FREEMAN, J. H., ABDELGADER, N. and KAN, P. Y. Y. (2002). High resolution deep level transient spectroscopy studies of the vacancy-oxygen and related defects in ion-implanted silicon. Journal of applied physics, 92 (7), 3755-3760.

G

GAD, M. and EVANS-FREEMAN, J. H. (2002). High resolution minority carrier transient spectroscopy of Si/SiGe/Si quantum wells. Journal of applied physics, 92 (9), 5252-5258.

V

VERNON-PARRY, K. D., EVANS-FREEMAN, J., HAWKINS, I. D., DAWSON, P. and PEAKER, A. R. (2001). Effect of dislocations on the photoluminescence decay of 1.54 μm emission from erbium-doped silicon. Journal of applied physics, 89 (5), 2715-2719.

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