Ion milling properties of laterally emitting thin-film electroluminescent materials

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BARROS, S. O., STEVENS, R., THOMAS, C. B., CRANTON, Wayne and CRAVEN, M. (2001). Ion milling properties of laterally emitting thin-film electroluminescent materials. IEEE Transactions on Semiconductor Manufacturing, 14 (2), 173-176.

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Abstract

A study has been undertaken of the ion milling properties of ZnS:Mn, Y2O3, Si3N4, SiO2, SiOxNy, and Al versus the etching time, the acceleration voltage, and the angle of incidence of the ion beam. Different ZnS:Mn etched profiles have been fabricated by modifying the angle of incidence; these are in agreement with the reported simulations

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Official URL:

http://ieeexplore.ieee.org/xpl/articleDetails.jsp?...

Research Institute, Centre or Group - Does NOT include content added after October 2018:

Materials and Engineering Research Institute > Advanced Coatings and Composites Research Centre > Electronic Materials and Sensors Research Group

Page Range:

173-176

Identifiers

Identification Number:

10.1109/66.920730

ORCID:

https://orcid.org/0000-0002-0142-7810