Synthesis and characterisation of Ga-doped hexagonal BaTiO3

FETEIRA, Antonio, KEITH, G.M., RAMPLING, M.J., KIRK, C.A., REANEY, I.M., SARMA, K., MC. ALFORD, N. and SINCLAIR, D.C. (2002). Synthesis and characterisation of Ga-doped hexagonal BaTiO3. Crystal Engineering, 5 (3-4), 439-448.

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Abstract

The hexagonal polymorph of BaTiO3 (P6(3)/mmc) has been stablished at room temperature by partial replacement of Ti by Ga, where BaTi1-yGayO3-y/2 and 0.06less than or equal toyless than or equal to0.125 for samples prepared at 1300degreesC. The unit cell expands with increasing y and Rietveld Refinement of Neutron diffraction data shows that oxygen vacancies occur only in the hexagonal close packed layers between the face-sharing Ti2O9 dimers. Exaggerated grain growth (> 100 mum) Occurs for ceramics processed at greater than or equal to1400degreesC and/or for sintering periods 2 hours. Electrical measurements show the materials to be electrically insulating with room temperature permittivity values of similar to70-80. Dense ceramics (94-97% of the theoretical X-ray density) resonate at microwave frequencies with Q.f values of similar to4000-8000 at similar to5.5 GHz.

Item Type:	Article
Research Institute, Centre or Group - Does NOT include content added after October 2018:	Materials and Engineering Research Institute > Structural Materials and Integrity Research Centre > Centre for Corrosion Technology
Identification Number:	https://doi.org/10.1016/S1463-0184(02)00055-2
Page Range:	439-448
Depositing User:	Hilary Ridgway
Date Deposited:	07 Jun 2012 10:44
Last Modified:	18 Mar 2021 09:30
URI:	https://shura.shu.ac.uk/id/eprint/5354

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