Origin of resistivity anomaly in p-type leads chalcogenide multiphase compounds

AMINORROAYA YAMINI, Sima, MITCHELL, D.R.G., WANG, H., GIBBS, Z.M., PEI, Y., DOU, S.X. and SNYDER, G.J. (2015). Origin of resistivity anomaly in p-type leads chalcogenide multiphase compounds. AIP Advances, 5, 053601. [Article]

Documents
15946:201315
[thumbnail of AIP Advances.pdf]
Preview
PDF
AIP Advances.pdf - Published Version
Available under License Creative Commons Attribution.

Download (2MB) | Preview
Abstract
The electrical resistivity curves for binary phase compounds of p-type lead chalcogenide (PbTe)(0.9−x)(PbSe)0.1(PbS)x, (x = 0.15, 0.2, 0.25), which contain PbS-rich secondary phases, show different behaviour on heating and cooling between 500-700 K. This is contrast to single phase compounds which exhibit similar behaviour on heating and cooling. We correlate these anomalies in the electrical resistivities of multiphase compounds to the variation in phase composition at high temperatures. The inhomogeneous distribution of dopants between the matrix and secondary phase is found to be crucial in the electronic transport properties of the multiphase compounds. These results can lead to further advances in designing composite Pb-chalcogenides with high thermoelectric performance.
More Information
Statistics

Downloads

Downloads per month over past year

View more statistics

Metrics

Altmetric Badge

Dimensions Badge

Share
Add to AnyAdd to TwitterAdd to FacebookAdd to LinkedinAdd to PinterestAdd to Email

Actions (login required)

View Item View Item