Electrochemical growth of GaSb and InSb for applications in infra-red detectors and optical communication systems

The low-temperature electrochemical deposition of GaSb and InSb semiconductors from aqueous electrolytes has been investigated. X-ray diffraction (XRD), energy dispersive X-ray analysis (EDAX) and scanning electron microscopy (SEM) have been used to study the deposits' crystallographic and stoichiometric characteristics. Thin films of GaSb and Sb mixtures have been produced, stoichiometric control being limited by the concurrent evolution of H-2 and SbH3. Mixtures of InSb with either Sb or In, and also mixtures of In, Sb and InSb have been grown. The type of substrate used was seen to affect the stoichiometry of the deposits. The results indicate that there are kinetic barriers to the formation of stoichiometric InSb under the conditions employed.