Design of a gate-driving cell for enabling extended SiC MOSFET voltage blocking

ISSA, Walid, ORTIZ GONZALEZ, Jose and ALATISE, Olayiwola (2022). Design of a gate-driving cell for enabling extended SiC MOSFET voltage blocking. Energies, 15 (20): 7768.

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Abstract

A series connection of SiC MOSFETs for kV blocking capability can enable more design flexibility in modular multi-level converters as well as other topologies. In this paper, a novel gate driver circuit capable of driving series-connected SiC MOSFETs for high voltage applications is proposed. The primary advantage of the proposed design is that a single gate driver was used to switch all the series devices. The circuit used switching capacitors to sequentially charge and discharge device gate capacitances during switching and enable a negative turn-off voltage to avoid device coupling from Miller-capacitive feedback effects. With the proposed gate driver design and appropriate component values selection, avalanche breakdown due to voltage divergence during switching transients could be avoided with only a minor imbalance in the top device. Simulations and experimental measurements showed that the zero-current turn-off transition of all switches was achieved, and this approved the validity of the design

Item Type:	Article
Uncontrolled Keywords:	02 Physical Sciences; 09 Engineering
Identification Number:	https://doi.org/10.3390/en15207768
SWORD Depositor:	Symplectic Elements
Depositing User:	Symplectic Elements
Date Deposited:	21 Oct 2022 09:23
Last Modified:	21 Oct 2022 09:23
URI:	https://shura.shu.ac.uk/id/eprint/30920

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