Thin film solar cells using all-electrodeposited ZnS, CdS and CdTe materials.

ECHENDU, Obi Kingsley. (2014). Thin film solar cells using all-electrodeposited ZnS, CdS and CdTe materials. Doctoral, Sheffield Hallam University (United Kingdom).. [Thesis]

Documents
19597:452533
[thumbnail of Version of Record]
Preview
PDF (Version of Record)
10694478.pdf - Accepted Version
Available under License All rights reserved.

Download (12MB) | Preview
Abstract
The urgent global need for affordable alternative and clean energy supply has triggered extensive research on the development of thin-film solar cells since the past few decades. This has necessitated the search for low-cost, scalable and manufacturable thin-film semiconductor deposition techniques which in turn has led to the research on electrodeposition technique as a possible candidate for the deposition of semiconductor materials and the fabrication of thin-film solar cells using these materials.Electronic quality ZnS, CdS, and CdTe thin layers have been successfully electrodeposited from aqueous solutions on glass/fluorine-doped tin oxide (FTO) substrates, using simplified two-electrode system instead of the conventional three-electrode system. This process was also carried out in a normal physical chemistry laboratory instead of the conventional cleanroom that is very expensive to maintain. The electrodeposited materials were characterised for their structural, optical, electrical, morphological and compositional properties using x-ray diffraction, optical absorption, photoelectrochemical cell, current-voltage, scanning electron microscopy and energy dispersive x-ray techniques respectively. The results show that amorphous n-type and p-type ZnS layers were deposited by varying the concentrations of Zn[2+] and S[2-] in the deposition electrolyte. The CdS layers show hexagonal structure with n-type electrical conduction while CdTe layers show cubic structure with n-type electrical conduction, in the cathodic deposition potential range explored.Using CdTe as the main absorber material, fully fabricated solar cell structures of the n-n hetero-junction + large Schottky barrier type were fabricated instead of the conventional p-n junction type structure. Conventional post-deposition CdCl[2] treatment of CdTe rather carried out with a mixture of CdCl[2] and CdF[2], resulted in pronounced improvement of all the device parameters. Characterisation of the fully fabricated solar cells was done using current-voltage and capacitance-voltage techniques. Promising device parameters were obtained for the best devices, with barrier heights greater than (1.00 - 1.13) eV, short-circuit current densities of (20 - 48) mAcm[-2], open-circuit voltages of (500 - 670) mV, fill factors of (0.33 - 0.47) and overall conversion efficiencies of (5.0 - 12.0)%. Remarkably, the two highest efficiency figures of 10.4% and 12.0% came up for solar cells involving ZnS as buffer layer and window layer with the structures, glass/FTO/n-ZnS/n-CdS/n-CdTe/Au and glass/FTO/n-ZnS/n-CdTe/Au, respectively. At present, the reproducibility and consistency of these devices is poor, but these results demonstrate that these devices structures have the potential to achieve efficiency values over 20% when fully optimised.
More Information
Statistics

Downloads

Downloads per month over past year

View more statistics

Share
Add to AnyAdd to TwitterAdd to FacebookAdd to LinkedinAdd to PinterestAdd to Email

Actions (login required)

View Item View Item