SiGeSn growth studies using reduced pressure chemical vapor deposition towards optoelectronic applications

WIRTHS, S., BUCA, D., IKONIC, Z., HARRISON, Paul, TIEDEMANN, A. T., HOLLÄNDER, B., STOICA, T., MUSSLER, G., BREUER, U., HARTMANN, J. M., GRÜTZMACHER, D. and MANTL, S. (2014). SiGeSn growth studies using reduced pressure chemical vapor deposition towards optoelectronic applications. Thin Solid Films, 557, 183-187.

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Link to published version:: https://doi.org/10.1016/j.tsf.2013.10.078
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    Abstract

    In this contribution, we propose a laser concept based on a double heterostructure consisting of tensile strained Ge as the active medium and SiGeSn ternaries as cladding layers. Electronic band-structure calculations were used to determine the Si and Sn concentrations yielding a type I heterostructure with appropriate band-offsets (50meV) between strained Ge and SiGeSn. Reduced pressure chemical vapor deposition system was employed to study the laser structure growth. Detailed analyses regarding layer composition, crystal quality, surface morphology and elastic strain are presented. A strong temperature dependence of the Si and Sn incorporation has been obtained, ranging from 4 to 19 at.% Si and from 4 to 12 at.% Sn (growth temperatures between 350 °C and 475°C). The high single crystalline quality and lowsurface roughness of 0.5–0.75nmdemonstrate that our layers are suitable for heterostructure laser fabrication.

    Item Type: Article
    Research Institute, Centre or Group - Does NOT include content added after October 2018: Materials and Engineering Research Institute > Thin Films Research Centre > Electronic Materials and Sensors Research Group
    Identification Number: https://doi.org/10.1016/j.tsf.2013.10.078
    Page Range: 183-187
    Depositing User: Paul Harrison
    Date Deposited: 19 Sep 2014 14:44
    Last Modified: 08 Jul 2019 16:16
    URI: http://shura.shu.ac.uk/id/eprint/8422

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