BARROS, S. O., STEVENS, R., THOMAS, C. B., CRANTON, Wayne and CRAVEN, M. (2001). Ion milling properties of laterally emitting thin-film electroluminescent materials. IEEE Transactions on Semiconductor Manufacturing, 14 (2), 173-176.Full text not available from this repository.
A study has been undertaken of the ion milling properties of ZnS:Mn, Y2O3, Si3N4, SiO2, SiOxNy, and Al versus the etching time, the acceleration voltage, and the angle of incidence of the ion beam. Different ZnS:Mn etched profiles have been fabricated by modifying the angle of incidence; these are in agreement with the reported simulations
|Research Institute, Centre or Group:||Materials and Engineering Research Institute > Thin Films Research Centre > Electronic Materials and Sensors Research Group|
|Depositing User:||Wayne Cranton|
|Date Deposited:||04 Feb 2016 11:49|
|Last Modified:||04 Feb 2016 11:49|
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