Ion milling properties of laterally emitting thin-film electroluminescent materials

BARROS, S. O., STEVENS, R., THOMAS, C. B., CRANTON, Wayne and CRAVEN, M. (2001). Ion milling properties of laterally emitting thin-film electroluminescent materials. IEEE Transactions on Semiconductor Manufacturing, 14 (2), 173-176.

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Official URL: http://ieeexplore.ieee.org/xpl/articleDetails.jsp?...
Link to published version:: https://doi.org/10.1109/66.920730
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    Abstract

    A study has been undertaken of the ion milling properties of ZnS:Mn, Y2O3, Si3N4, SiO2, SiOxNy, and Al versus the etching time, the acceleration voltage, and the angle of incidence of the ion beam. Different ZnS:Mn etched profiles have been fabricated by modifying the angle of incidence; these are in agreement with the reported simulations

    Item Type: Article
    Research Institute, Centre or Group - Does NOT include content added after October 2018: Materials and Engineering Research Institute > Thin Films Research Centre > Electronic Materials and Sensors Research Group
    Identification Number: https://doi.org/10.1109/66.920730
    Page Range: 173-176
    Depositing User: Wayne Cranton
    Date Deposited: 04 Feb 2016 11:49
    Last Modified: 04 Feb 2016 11:49
    URI: http://shura.shu.ac.uk/id/eprint/7996

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