Synthesis and characterisation of Ga-doped hexagonal BaTiO3

FETEIRA, Antonio, KEITH, G.M., RAMPLING, M.J., KIRK, C.A., REANEY, I.M., SARMA, K., MC. ALFORD, N. and SINCLAIR, D.C. (2002). Synthesis and characterisation of Ga-doped hexagonal BaTiO3. Crystal Engineering, 5 (3-4), 439-448.

Full text not available from this repository.
Official URL: http://dx.doi.org/10.1016/S1463-0184(02)00055-2
Link to published version:: https://doi.org/10.1016/S1463-0184(02)00055-2
Related URLs:

    Abstract

    The hexagonal polymorph of BaTiO3 (P6(3)/mmc) has been stablished at room temperature by partial replacement of Ti by Ga, where BaTi1-yGayO3-y/2 and 0.06less than or equal toyless than or equal to0.125 for samples prepared at 1300degreesC. The unit cell expands with increasing y and Rietveld Refinement of Neutron diffraction data shows that oxygen vacancies occur only in the hexagonal close packed layers between the face-sharing Ti2O9 dimers. Exaggerated grain growth (> 100 mum) Occurs for ceramics processed at greater than or equal to1400degreesC and/or for sintering periods 2 hours. Electrical measurements show the materials to be electrically insulating with room temperature permittivity values of similar to70-80. Dense ceramics (94-97% of the theoretical X-ray density) resonate at microwave frequencies with Q.f values of similar to4000-8000 at similar to5.5 GHz.

    Item Type: Article
    Research Institute, Centre or Group - Does NOT include content added after October 2018: Materials and Engineering Research Institute > Structural Materials and Integrity Research Centre > Centre for Corrosion Technology
    Identification Number: https://doi.org/10.1016/S1463-0184(02)00055-2
    Page Range: 439-448
    Depositing User: Hilary Ridgway
    Date Deposited: 07 Jun 2012 10:44
    Last Modified: 15 Oct 2018 07:48
    URI: http://shura.shu.ac.uk/id/eprint/5354

    Actions (login required)

    View Item View Item

    Downloads

    Downloads per month over past year

    View more statistics