Analysis of the Electronic Properties of All-electroplated ZnS, CdS and CdTe Graded Bandgap Photovoltaic Device Configuration

OJO, A. A. and DHARMADASA, I (2017). Analysis of the Electronic Properties of All-electroplated ZnS, CdS and CdTe Graded Bandgap Photovoltaic Device Configuration. Solar Energy, 158, 721-727.

[img] PDF
Dharmadasa-AnalysisoftheElectronicPropertiesofAll-electroplated(AM).pdf - Accepted Version
Restricted to Repository staff only until 16 October 2018.
Available under License Creative Commons Attribution Non-commercial No Derivatives.

Download (956kB)
Official URL: http://www.sciencedirect.com/science/article/pii/S...
Link to published version:: 10.1016/j.solener.2017.10.042

Abstract

All-electrodeposited ZnS, CdS and CdTe thin layers have been incorporated in a graded bandgap solar cell structure of glass/FTO/n-ZnS/n-CdS/n-CdTe/Au have been fabricated and an average conversion efficiency of 14.18% was achieved under AM1.5 illuminated condition. Based on former work in which 10% conversion efficiency was reported, optimisation has been made to the semiconductor layers, precursors, thicknesses and the post-growth treatment. These results demonstrate the advantages of multi-layer graded bandgap device configuration and the inclusion of gallium based post-growth treatment (CdCl2+Ga2(SO4)3) on the CdS/CdTe-based device structure. The fabricated devices were characterised using both current-voltage (I-V) and capacitance-voltage (C-V) techniques. Under dark I-V condition, a rectification factor (R.F.) of 104.8, ideality factor (n) of 1.60 and a barrier height (ϕb) >0.82 eV were observed. Under AM1.5 illuminated I-V condition, short-circuit current density (Jsc) of 34.08 mAcm-2, open-circuit voltage (Voc) of 730 mV, fill-factor (FF) of 0.57 and conversion efficiency of 14.18% were observed. Under dark C-V condition, doping density (ND) of 7.79×1014 cm-3 and a depletion width (W) of 1092 nm were achieved. In addition, the work demonstrates the capability of two-electrode system as a simplification to the conventional three-electrode system in the electrodeposition of semiconductors.

Item Type: Article
Research Institute, Centre or Group: Materials and Engineering Research Institute > Thin Films Research Centre > Electronic Materials and Sensors Research Group
Identification Number: 10.1016/j.solener.2017.10.042
Depositing User: Jill Hazard
Date Deposited: 11 Oct 2017 15:19
Last Modified: 19 Oct 2017 16:30
URI: http://shura.shu.ac.uk/id/eprint/17040

Actions (login required)

View Item View Item

Downloads

Downloads per month over past year

View more statistics