Items where Author is "Young, J."

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CHAURE, N. B., SAMANTILLEKE, A. P., BURTON, R. P., YOUNG, J. and DHARMADASA, I (2005). Electrodeposition of p(+), p, i, n and n(+)-type copper indium gallium diselenide for development of multilayer thin film solar cells. Thin Solid Films, 472 (1-2), 212-216.

CHAURE, N. B., YOUNG, J., SAMANTILLEKE, A. P. and DHARMADASA, I (2004). Electrodeposition of p-i-n type CuInSe2 multilayers for photovoltaic applications. Solar energy materials and solar cells, 81 (1), 125-133.

DHARMADASA, I, CHAURE, N. B., YOUNG, J., SAMANTILLEKE, A. P. and DELSOL, T. (2003). Reply to Comment on 'New ways of developing glass conducting glass CdS/CdTe metal thin-film solar cells based on a new model', by Dharmadasa et al 2002 Semicond. Sci. Technol 17 1238-48. Semiconductor Science and Technology, 18 (8), 813-816.

DHARMADASA, I, SAMANTILLEKE, A. P., CHAURE, N. B. and YOUNG, J. (2002). New ways of developing glass/conducting glass/CdS/CdTe/metal thin-film solar cells based on a new model. Semiconductor Science and Technology, 17 (12), 1238-1248.

DHARMADASA, I, SAMANTILLEKE, A. P., YOUNG, J., BOYLE, M. H., BACEWICZ, R. and WOLSKA, A. (1999). Electrodeposited p-type and n-type ZnSe layers for light emitting devices and multi-layer tandem solar cells. Journal of Materials Science: Materials in Electronics, 10 (5-6), 441-445.

SAMANTILLEKE, A. P., BOYLE, M. H., YOUNG, J. and DHARMADASA, I (1998). Electrodeposition of n-type and p-type ZnSe thin films for applications in large area optoelectronic devices. Journal of Materials Science: Materials in Electronics, 9 (4), 289-290.

SAMANTILLEKE, A. P., BOYLE, M. H., YOUNG, J. and DHARMADASA, I (1998). Growth of n-type and p-type ZnSe thin films using an electrochemical technique for applications in large area optoelectronic devices. Journal of Materials Science: Materials in Electronics, 9 (3), 231-235.

DHARMADASA, I, BLOMFIELD, C. J., GREGORY, G. E. and YOUNG, J. (1994). Influence of chemical etching on metal contacts to II-VI compounds: CdTe and ZnSe. International journal of electronics, 76 (5), 961-967.

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