Items where Author is "Vernon-Parry, K. D."

VERNON-PARRY, K. D., EVANS-FREEMAN, J. H. and DAWSON, P. (2008). The effect of hole confinement on photoluminescence from Er in SiGe/Si quantum wells. Materials Science and Engineering B, 146 (1-3), 231-235. [Article]

EVANS-FREEMAN, J. H., EMIROGLU, D., GAD, M. A., MITROMARA, N. and VERNON-PARRY, K. D. (2006). Deep electronic states in ion-implanted Si. Journal of materials science. [Article]

LEACH, C. and VERNON-PARRY, K. D. (2006). The effect of sintering temperature on the development of grain boundary traps in zinc oxide based varistors. Journal of Materials Science, 41 (12), 3815-3819. [Article]

VERNON-PARRY, K. D., DAVIES, G. and GALLOWAY, S. (2004). Electronic and structural properties of grain boundaries in electron-irradiated edge-defined film-fed growth silicon. Semiconductor science and technology. [Article]

VERNON-PARRY, K. D., EVANS-FREEMAN, J., HAWKINS, I. D., DAWSON, P. and PEAKER, A. R. (2001). Effect of dislocations on the photoluminescence decay of 1.54 μm emission from erbium-doped silicon. Journal of applied physics, 89 (5), 2715-2719. [Article]

VERNON-PARRY, K. D., EVANS-FREEMAN, J. H., MITROMARA, N. and MAY, P. W. (2008). High Resolution Deep Level Transient Spectroscopy of p-n diodes formed from p-type polycrystalline diamond on n-type silicon. In: Conference on Optoelectronic and Microelectronic Materials and Devices, Sydney, Australia, Jul 28-Sep 01, 2008. [Conference or Workshop Item]