Items where Author is "Evans-Freeman, J. H."

NABOK, A. V., DAVIS, F., HASSAN, A. K., HIGSON, S. P. J. and EVANS-FREEMAN, J. H. (2008). Optical and AFM study of electrostatically assembled films of CdS and ZnS colloid nanoparticles. Applied Surface Science, 254 (15), 4891-4898. [Article]

VERNON-PARRY, K. D., EVANS-FREEMAN, J. H. and DAWSON, P. (2008). The effect of hole confinement on photoluminescence from Er in SiGe/Si quantum wells. Materials Science and Engineering B, 146 (1-3), 231-235. [Article]

HASHIM, A. A., BARRATT, D. S., HASSAN, A. K., EVANS-FREEMAN, J. H. and NABOK, A. (2006). Resistivity network and structural model of the oxide cathode for CRT application. Journal of display technology, 2 (2), 186-93. [Article]

EVANS-FREEMAN, J. H., EMIROGLU, D., GAD, M. A., MITROMARA, N. and VERNON-PARRY, K. D. (2006). Deep electronic states in ion-implanted Si. Journal of materials science. [Article]

EVANS-FREEMAN, J. H. and VERNON-PARRY, K. (2005). Optical and electrical activity of defects in rare earth implanted Si. Optical materials. [Article]

EVANS-FREEMAN, J. H., EMIROGLU, D., VERNON-PARRY, K., MURPHY, J. D. and WILSHAW, P. R. (2005). High resolution deep level transient spectroscopy applied to extended defects in silicon. Journal of physics. Condensed matter, 17 (22). [Article]

ABDELGADER, N. and EVANS-FREEMAN, J. H. (2003). High resolution electrical studies of vacancy-rich and interstitial-rich regions in ion-implanted silicon. Physical review E, 67 (6), 061703. [Article]

GAD, M. and EVANS-FREEMAN, J. H. (2002). High resolution minority carrier transient spectroscopy of Si/SiGe/Si quantum wells. Journal of applied physics, 92 (9), 5252-5258. [Article]

EVANS-FREEMAN, J. H., ABDELGADER, N. and KAN, P. Y. Y. (2002). High resolution deep level transient spectroscopy studies of the vacancy-oxygen and related defects in ion-implanted silicon. Journal of applied physics, 92 (7), 3755-3760. [Article]

VERNON-PARRY, K. D., EVANS-FREEMAN, J. H., MITROMARA, N. and MAY, P. W. (2008). High Resolution Deep Level Transient Spectroscopy of p-n diodes formed from p-type polycrystalline diamond on n-type silicon. In: Conference on Optoelectronic and Microelectronic Materials and Devices, Sydney, Australia, Jul 28-Sep 01, 2008. [Conference or Workshop Item]