Simulations of mid infrared emission of InAsN semiconductors

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ORIAKU, C. I. and PEREIRA, Mauro (2015). Simulations of mid infrared emission of InAsN semiconductors. Optical and Quantum Electronics, 47 (4), 829-834. [Article]

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9583:20701
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Abstract
This paper delivers an approximation to the complex many body problem of luminescence in semiconductors to the case of mid infrared luminescence of dilute nitrides. The results are compared with recent experimental data for InAsN semiconductors.
More Information
Official URL:
http://dx.doi.org/10.1007/s11082-014-0002-4
Research Institute, Centre or Group - Does NOT include content added after October 2018:
Materials and Engineering Research Institute > Advanced Coatings and Composites Research Centre > Electronic Materials and Sensors Research Group
Page Range:
829-834

Identifiers

Identification Number:
10.1007/s11082-014-0002-4
ORCID for Mauro Pereira: ORCID iD orcid.org/0000-0002-2276-2095

Library

Item Type:
Article
Depositing User:
Hilary Ridgway
Date record made live:
27 Mar 2015 10:58
Last Modified:
28 Apr 2025 06:34
Date of first compliant deposit:
25 April 2016
Date of first compliant Open Access:
1 May 2016
Version of first compliant deposit:
Author Accepted Manuscript
URI:
https://shura.shu.ac.uk/id/eprint/9583
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