Simulations of mid infrared emission of InAsN semiconductors

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ORIAKU, C. I. and PEREIRA, Mauro (2015). Simulations of mid infrared emission of InAsN semiconductors. Optical and Quantum Electronics, 47 (4), 829-834. [Article]

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9583:20701

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9583:20701

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Abstract

This paper delivers an approximation to the complex many body problem of luminescence in semiconductors to the case of mid infrared luminescence of dilute nitrides. The results are compared with recent experimental data for InAsN semiconductors.

More Information

Official URL:

http://dx.doi.org/10.1007/s11082-014-0002-4

Research Institute, Centre or Group - Does NOT include content added after October 2018:

Materials and Engineering Research Institute > Advanced Coatings and Composites Research Centre > Electronic Materials and Sensors Research Group

Page Range:

829-834

Identifiers

Identification Number:

10.1007/s11082-014-0002-4

ORCID:

https://orcid.org/0000-0002-2276-2095