Interface recombination in GaAs-GaAlAs quantum

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SERMAGE, B., PEREIRA, Mauro, ALEXANDRE, F., BEERENS, J., AZOULAY, R., TALLOT, C., JEAN-LOUIS, A. M. and MEICHENIN, D. (1987). Interface recombination in GaAs-GaAlAs quantum. Le Journal de Physique Colloques, 48 (C5), C5-135. [Article]

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Abstract

Non radiative carriers lifetime has been studied in MBE and MOCVD grown GaAs-GaAlAs undoped double heterostructures by luminescence decay technique. Interface recombination velocity is obtained by studying series of samples with different GaAs layer thicknesses d (between 1 µm and 20 Å). For each series S is constant when d is larger than 200 Å. When d is smaller than 200 Å, S increases due to the increase of the leaking of the carriers wave functions in the barrier when the well thickness decreases.

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Official URL:

http://dx.doi.org/10.1051/jphyscol:1987525

Research Institute, Centre or Group - Does NOT include content added after October 2018:

Materials and Engineering Research Institute > Advanced Coatings and Composites Research Centre > Electronic Materials and Sensors Research Group

Page Range:

C5-135

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Identification Number:

10.1051/jphyscol:1987525

ORCID for Mauro Pereira: