Preparation of indium selenide thin film by electrochemical technique

MADUGU, M. L., BOWEN, L., ECHENDU, O. K. and DHARMADASA, I (2014). Preparation of indium selenide thin film by electrochemical technique. Journal of Materials Science: Materials in Electronics, 25 (9), 3977-3983.

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Indium Selenide (InxSey) layers were potentiostatically deposited on glass/fluorine-doped tin oxide (FTO) substrates, using electro-chemical technique from aqueous solution containing 0.10 M InCl3 and 0.02 M SeO2. The electrodeposits were characterised using a wide range of analytical techniques; X-ray diffraction (XRD), scanning electron microscopy (SEM), Atomic force microscopy (AFM), optical absorption and photoelectrochemical (PEC) cell, for their structural, morphological, optical and electrical properties. The XRD show that the prepared films consist of mixed phases of InSe and In2Se3. The films grown at all voltages in this work were p type in electrical conduction, with bandgaps in the range of (1.70-1.80) eV in both as-deposited and heat-treated forms. The wetting property of InxSey on glass/FTO surfaces indicates that InxSey layers can be helpful as buffer layers or window layers in thin film solar cell development due to their ability to uniformly cover the substrate. The cross-section morphology show smoothening effect of these layers. The experimental results to date are presented in this paper.

Item Type: Article
Research Institute, Centre or Group - Does NOT include content added after October 2018: Materials and Engineering Research Institute > Structural Materials and Integrity Research Centre > Centre for Corrosion Technology
Identification Number:
Page Range: 3977-3983
Depositing User: Ann Betterton
Date Deposited: 10 Dec 2014 16:23
Last Modified: 18 Mar 2021 10:45

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