Many-body treatment on the modulation response in a strained quantum well semiconductor laser medium

CHOW, W. W., PEREIRA, Mauro and KOCH, S. W. (1992). Many-body treatment on the modulation response in a strained quantum well semiconductor laser medium. Applied Physics Letters, 61 (7), p. 758.

Full text not available from this repository.

Abstract

The carrier density modulation response of a semiconductor laser medium is analyzed. The differential gain and linewidth enhancement factor are computed as functions of strain and threshold gain. The example of InGaAs/InP with different InAs content is used to illustrate the situations of zero, tensile and compressive strain.

Item Type:	Article
Research Institute, Centre or Group - Does NOT include content added after October 2018:	Materials and Engineering Research Institute > Advanced Coatings and Composites Research Centre > Electronic Materials and Sensors Research Group
Identification Number:	https://doi.org/10.1063/1.107789
Page Range:	p. 758
Depositing User:	Helen Garner
Date Deposited:	18 Nov 2014 17:29
Last Modified:	18 Mar 2021 19:00
URI:	https://shura.shu.ac.uk/id/eprint/8813

Actions (login required)

View Item

Downloads

Publication Metrics