Many-body treatment on the modulation response in a strained quantum well semiconductor laser medium

Tools

CHOW, W. W., PEREIRA, Mauro and KOCH, S. W. (1992). Many-body treatment on the modulation response in a strained quantum well semiconductor laser medium. Applied Physics Letters, 61 (7), p. 758. [Article]

Abstract
More Information
Metrics
Share

[+][-]

Abstract

The carrier density modulation response of a semiconductor laser medium is analyzed. The differential gain and linewidth enhancement factor are computed as functions of strain and threshold gain. The example of InGaAs/InP with different InAs content is used to illustrate the situations of zero, tensile and compressive strain.

More Information

Official URL:

http://dx.doi.org/10.1063/1.107789

Research Institute, Centre or Group - Does NOT include content added after October 2018:

Materials and Engineering Research Institute > Advanced Coatings and Composites Research Centre > Electronic Materials and Sensors Research Group

Page Range:

p. 758

Identifiers

Identification Number:

10.1063/1.107789

ORCID:

https://orcid.org/0000-0002-2276-2095