The Influence of Many-Body and Bandstructure Effects in the Design of High Power Diode Lasers

PEREIRA, Mauro and WENZEL, H. (2002). The Influence of Many-Body and Bandstructure Effects in the Design of High Power Diode Lasers. physica status solidi (b), 232 (1), 134-137.

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Abstract

A microscopic many-body theory is used to compute the dielectric constant of single quantum wells. The nonparabolic electron and hole subband dispersion relations and dipole transition moments of the free propagators stem from the numerical solutions of an 8 × 8 k · p Hamiltonian. The resulting local optical response and carrier recombination rates are used as input for realistic device simulators. Absorption, gain as well as threshold currents of distributed Bragg reflector lasers are presented.

Item Type:	Article
Research Institute, Centre or Group - Does NOT include content added after October 2018:	Materials and Engineering Research Institute > Advanced Coatings and Composites Research Centre > Electronic Materials and Sensors Research Group
Identification Number:	https://doi.org/10.1002/1521-3951(200207)232:1<134::AID-PSSB134>3.0.CO;2-1
Page Range:	134-137
Depositing User:	Helen Garner
Date Deposited:	07 Nov 2014 13:42
Last Modified:	18 Mar 2021 19:15
URI:	https://shura.shu.ac.uk/id/eprint/8764

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