Thin film LaYbO3 capacitor structures grown by Pulsed Laser Deposition

VASTA, G, FETEIRA, Antonio, WOODWARD, D I, WALKER, D, THOMAS, P A and JACKSON, T J (2012). Thin film LaYbO3 capacitor structures grown by Pulsed Laser Deposition. Thin Solid Films, 527, 81-86.

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The crystal structure and the dielectric properties of LaYbO3 films grown by pulsed laser deposition and integrated in SrRuO3/LaYbO3/SrRuO3 capacitive structures are reported. Two different fabrication procedures are assessed. When the SrRuO3/LaYbO3/SrRuO3 stack is grown in-situ, the relative permittivity of the LaYbO3 is 35. When instead the lower SrRuO3 electrode layer is patterned by contact photolithography and argon ion milling, prior to the deposition of the LaYbO3, the relative permittivity of the LaYbO3 is 55. In this case, post-growth annealing brings the relative permittivity towards that of the film grown in-situ. In both cases the relative permittivity is higher than the value measured in bulk material. This is attributed to the permittivity being highest along the orthorhombic c-axis. The annealing procedure produced a recrystallization of the LaYbO3 and of the SrRuO3.

Item Type: Article
Research Institute, Centre or Group - Does NOT include content added after October 2018: Materials and Engineering Research Institute > Structural Materials and Integrity Research Centre > Centre for Infrastructure Management
Identification Number:
Page Range: 81-86
Depositing User: Antonio Feteira
Date Deposited: 21 Jan 2013 15:07
Last Modified: 18 Mar 2021 20:00

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