Magnesium incorporation in n-CdTe to produce wide bandgap p-Type CdTe:Mg window layers

ALAM, Ashfaque, OJO, Ayotunde, JASINSKI, Jacek and DHARMADASA, I (2018). Magnesium incorporation in n-CdTe to produce wide bandgap p-Type CdTe:Mg window layers. ChemEngineering, 2 (4), p. 59.

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In order to develop wide bandgap p-type window materials to use in graded bandgap devices, the effects of magnesium (Mg) in n-CdTe layers were explored. In this work, magnesium-incorporated cadmium telluride (CdTe:Mg) layers were electroplated using two-electrode method. The layers were deposited on glass/FTO (flourine doped tin oxide) substrates, using an aqueous solution containing Cd2+, Mg2+ and tellurium dioxide (TeO2) as the precursors. X-ray diffraction (XRD) studies indicate the reduction of crystallinity as the Mg concentration is increased in parts per million (ppm) level. Material becomes a completely amorphous layer at high Mg concentrations in the electrolytic bath. Photoelectrochemical (PEC) measurements show the gradual reduction of n-CdTe turning into p-CdTe layers when Mg concentration is increased in the electrolyte. Optical absorption measurements show the expansion of energy bandgap from CdTe bandgap (~1.48 eV) up to ~2.85 eV. The other characterisation results (energy dispersive X-ray spectroscopy (EDX), scanning electron microscopy (SEM), X-ray photoelectron spectroscopy (XPS), and photoluminescence (PL)) are also explored and presented together with above experimental results.

Item Type: Article
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Page Range: p. 59
Depositing User: Louise Beirne
Date Deposited: 31 Jan 2019 11:38
Last Modified: 18 Mar 2021 06:45

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