Electrodeposition of CdS thin-films from cadmium acetate and ammonium thiosulphate precursors

ALAM, A.E., CRANTON, Wayne and DHARMADASA, I. (2019). Electrodeposition of CdS thin-films from cadmium acetate and ammonium thiosulphate precursors. Journal of Materials Science: Materials in Electronics.

10.1007_s10854-019-00750-1.pdf - Published Version
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Official URL: https://link.springer.com/article/10.1007%2Fs10854...
Open Access URL: https://link.springer.com/content/pdf/10.1007%2Fs1... (Published version)
Link to published version:: https://doi.org/10.1007/s10854-019-00750-1


Cadmium sulphide (CdS) thin-films have been electrodeposited using two electrode system to be used as the hole back diffusion barrier (hbdb) layer for graded bandgap solar cells with p-type windows. Cadmium acetate dihydrate [Cd(CH3COO)2·2H2O] and ammonium thiosulphate [(NH4)2S2O3] have been used as the cadmium (Cd) and sulphur (S) precursors respectively. In this work, CdS layers have been grown on glass/FTO (fluorine doped tin oxide) substrates at cathodic potentials ranging from 1300 to 1460 mV in order to find the best growth voltage. N-type conductivity is observed for all the layers and band-gap ranged between ~ 2.36 and ~ 2.40 eV for as-deposited layers and ~ 2.31 and ~ 2.36 eV for air-annealed layers. X-ray diffraction (XRD) analysis revealed cubic/hexagonal mixed crystallinity for the as-grown layers which indicates a tendency of transiting towards hexagonal structure upon annealing. Compositional and morphological characteristics of the layers have been investigated with energy dispersive X-ray (EDX) and scanning electron microscopy (SEM) respectively.

Item Type: Article
Uncontrolled Keywords: 0912 Materials Engineering; Applied Physics
Identification Number: https://doi.org/10.1007/s10854-019-00750-1
SWORD Depositor: Symplectic Elements
Depositing User: Symplectic Elements
Date Deposited: 21 Jan 2019 15:20
Last Modified: 18 Mar 2021 06:50
URI: https://shura.shu.ac.uk/id/eprint/23805

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