Electrical properties of a novel 1,3-bis-(p-iminobenzoic acid) indane langmuir-blodgett films containing ZnS nanoparticles

ZnS nanoparticles have been formed in a newly synthesized 1,3-bis-(p-iminobenzoic acid) indane (IBI) by exposing Zn2+ doped multilayered Langmuir-Blodgett (LB) film to H2S gas after the growth. The formation of ZnS nanoparticles in the LB film structure was verified by measuring UV-Visible absorption spectra. DC electrical measurements were carried out for thin films of IBI prepared in a metal/LB films/metal sandwich structure with and without ZnS nanoparticles. It was observed that ZnS nanoparticles in the LB films cause a blue-shift in the absorption spectra as well as a decrease in both capacitance and conductivity values. By analysing I-V curves and assuming a Schottky conduction mechanism the barrier height was found to be about 1.13 eV and 1.21 eV for IBI LB films without and with ZnS nanoparticles, respectively. It is thought that the presence of ZnS nanoparticles influences the barrier height at the metal-organic film interface and causes a change in electrical conduction properties of LB films.