Microstructural and electrical studies on diamond films

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CHAURE, S., CHAURE, N. B., HASSAN, A. K., RAY, A. K., REEHAL, H. S., GHERMAZION, A. and CAPAN, R. (2005). Microstructural and electrical studies on diamond films. Vacuum, 77 (3), 231-235. [Article]

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Abstract

X-ray diffraction, atomic force microscopy and electrical studies were performed on 2-3 mu m thick diamond films on silicon substrates. The films were produced by the microwave plasma chemical vapour deposition method. The films were polycrystalline having a grain size of 32.1 nm. From room temperature current-voltage measurements, it was found that the charge transport mechanism was due to the thermionic emission over the potential barrier of 1.3 eV. (c) 2004 Elsevier Ltd. All rights reserved.

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Research Institute, Centre or Group - Does NOT include content added after October 2018:

Materials and Engineering Research Institute > Advanced Coatings and Composites Research Centre > Electronic Materials and Sensors Research Group

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231-235

Identifiers

Identification Number:

10.1016/j.vacuum.2004.09.023

ORCID for A. K. Hassan: