Valence intersubband gain without population inversion

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PEREIRA, M. F. (2010). Valence intersubband gain without population inversion. CENTRAL EUROPEAN JOURNAL OF PHYSICS, 8 (1), 61-64. [Article]

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Abstract

Terahertz gain without population inversion is studied in thin III-V semiconductor quantum wells. Nonequilibrium hole populations leading to intervalence gain in the transverse electric mode are investigated. The results are obtained with a Keldysh Nonequilibrium Green's Functions approach that takes into account bandstructure, manybody and nonequilibrium effects.

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Times Cited: 0 International Conference on Semiconductor Materials and Optics OCT 09-10, 2008 Warsaw, POLAND

Research Institute, Centre or Group - Does NOT include content added after October 2018:

Materials and Engineering Research Institute > Advanced Coatings and Composites Research Centre > Electronic Materials and Sensors Research Group

Page Range:

61-64

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ORCID:

https://orcid.org/0000-0002-2276-2095