Valence intersubband gain without population inversion

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PEREIRA, M. F. (2010). Valence intersubband gain without population inversion. CENTRAL EUROPEAN JOURNAL OF PHYSICS, 8 (1), 61-64. [Article]

Abstract
Terahertz gain without population inversion is studied in thin III-V semiconductor quantum wells. Nonequilibrium hole populations leading to intervalence gain in the transverse electric mode are investigated. The results are obtained with a Keldysh Nonequilibrium Green's Functions approach that takes into account bandstructure, manybody and nonequilibrium effects.
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Additional Information:
Times Cited: 0 International Conference on Semiconductor Materials and Optics OCT 09-10, 2008 Warsaw, POLAND
Research Institute, Centre or Group - Does NOT include content added after October 2018:
Materials and Engineering Research Institute > Advanced Coatings and Composites Research Centre > Electronic Materials and Sensors Research Group
Page Range:
61-64

Identifiers

ORCID for M. F. Pereira: ORCID iD orcid.org/0000-0002-2276-2095

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Item Type:
Article
Depositing User:
Danny Weston
Date Deposited:
15 Apr 2010 11:30
Last Modified:
18 Mar 2021 10:15
URI:
https://shura.shu.ac.uk/id/eprint/1698
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