Thermoelectric performance of n -type (PbTe) 0.75 (PbS) 0.15 (PbSe) 0.1 composites

AMINORROAYA YAMINI, Sima, WANG, H., GINTING, D., MITCHELL, D.R.G., DOU, S.X. and SNYDER, G.J. (2014). Thermoelectric performance of n -type (PbTe) 0.75 (PbS) 0.15 (PbSe) 0.1 composites. ACS Applied Materials and Interfaces, 6 (14), 11476-11483.

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Lead chalcogenides (PbQ, Q = Te, Se, S) have proved to possess high thermoelectric efficiency for both n-type and p-type compounds. Recent success in tuning of electronic band structure, including manipulating the band gap, multiple bands, or introducing resonant states, has led to a significant improvement in the thermoelectric performance of p-type lead chalcogenides compared to the n-type ones. Here, the n-type quaternary composites of (PbTe)0.75(PbS)0.15(PbSe)0.1 are studied to evaluate the effects of nanostructuring on lattice thermal conductivity, carrier mobility, and effective mass variation. The results are compared with the similar ternary systems of (PbTe)1–x(PbSe)x, (PbSe)1–x(PbS)x, and (PbS)1–x(PbTe)x. The reduction in the lattice thermal conductivity owing to phonon scattering at the defects and interfaces was found to be compensated by reduced carrier mobility. This results in a maximum figure of merit, zT, of ∼1.1 at 800 K similar to the performance of the single phase alloys of PbTe, PbSe, and (PbTe)1–x(PbSe)x.

Item Type: Article
Research Institute, Centre or Group - Does NOT include content added after October 2018: Materials and Engineering Research Institute > Engineering Research
Identification Number:
Page Range: 11476-11483
Depositing User: Sima Aminorroaya Yamini
Date Deposited: 28 Jul 2017 13:56
Last Modified: 18 Mar 2021 11:15

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