Laser Induced Magnetization Reversal for Detection in Optical Interconnects

AZIM, Zubair Al, FONG, Xuanyao, OSTLER, Thomas, CHANTRELL, Roy and ROY, Kaushik (2014). Laser Induced Magnetization Reversal for Detection in Optical Interconnects. IEEE Electron Device Letters, 35 (12), 1317-1319.

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Optical interconnect has emerged as the front-runner to replace electrical interconnect especially for off-chip communication. However, a major drawback with optical interconnects is the need for photodetectors and amplifiers at the receiver, implemented usually by direct bandgap semiconductors and analog CMOS circuits, leading to large energy consumption and slow operating time. In this letter, we propose a new optical interconnect architecture that uses a magnetic tunnel junction (MTJ) at the receiver side that is switched by femtosecond laser pulses. The state of the MTJ can be sensed using simple digital CMOS latches, resulting in significant improvement in energy consumption. Moreover, magnetization in the MTJ can be switched on the picoseconds time-scale and our design can operate at a speed of 5 Gb/s for a single link.

Item Type: Article
Departments - Does NOT include content added after October 2018: Faculty of Science, Technology and Arts > Department of Engineering and Mathematics
Identification Number:
Page Range: 1317-1319
Depositing User: Thomas Ostler
Date Deposited: 15 Mar 2017 11:57
Last Modified: 18 Mar 2021 16:15

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