Automated numerical characterization of dilute semiconductors per comparison with luminescence

This paper combines analytical approximations for the optical absorption and luminescence of semiconductors with Trust Region-Reflective (TRR) methods methods, delivering a robust numerical characterization method to be used in the study of new bulk semiconductors per direct comparison with experimental spectra. It further extends recent applications of the theory to the case of dilute nitride semiconductors and confirms results for the s-shape of the luminescence peak as a function of temperature.