Nanocomposite organic films on silicon

MALIK, S., RAY, A. K., HASSAN, A. K. and NABOK, A. V. (2003). Nanocomposite organic films on silicon. IEEE Transactions on Nanotechnology, 2 (3), 149-153.

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Metal-insulator-semiconductor structures were fabricated using 40-layers-thick Langmuir-Blodgett (LB) films of stearic acid (SA) on hydrophobic n-type silicon (n-Si) substrates. Cadmium sulphide (CdS) nanoparticles were introduced by exposure to H2S gas for a period of 12 h. Samples containing CdS nanoparticles exhibit lower dc leakage current but higher effective dielectric constant. The effective dielectric constant of the US embedded SA matrix is found to be 5.1. The Poole-Frenkel effect is prevalent for charge transport in the LB films containing US nanoparticles at the field higher than 10(7.)Vm(-1). The effect becomes saturated at higher fields.

Item Type: Article
Additional Information: IEEE Silicon Nanelectronics Workshop, JUN 09-10, 2002 HONOLULU, HAWAII
Research Institute, Centre or Group - Does NOT include content added after October 2018: Materials and Engineering Research Institute > Advanced Coatings and Composites Research Centre > Electronic Materials and Sensors Research Group
Identification Number:
Page Range: 149-153
Depositing User: Ann Betterton
Date Deposited: 20 Apr 2010 10:24
Last Modified: 18 Mar 2021 09:30

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