The Effect of Fluorine Doping on the Characteristic Behaviour of CdTe

OJO, A. A. and DHARMADASA, I (2016). The Effect of Fluorine Doping on the Characteristic Behaviour of CdTe. Journal of Electronic Materials, 45 (11), 5728-5738.

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    Fluorine which is an n-type dopant of cadmium telluride thin films was included during growth from a cadmium nitrate [Cd(NO3)2Æ4H2O] bath using an electrodeposition technique. The fluorine concentration in the Cd(NO3)2Æ4H2O baths were varied between 0.5 ppm and 50 ppm in order to determine its effect on the optical, structural, morphological and electrical properties of the as-deposited and the post-growth-treated layers. These characterisations were carried out using x-ray diffraction, ultraviolet–visible spectrophotometry, scanning electron microscopy, energy dispersive x-rays spectroscopy, photoelectrochemical cell measurement, direct current conductivity measurement and fully fabricated device characterisation. The results are systematically reported in this paper.

    Item Type: Article
    Research Institute, Centre or Group - Does NOT include content added after October 2018: Materials and Engineering Research Institute > Thin Films Research Centre > Electronic Materials and Sensors Research Group
    Identification Number:
    Page Range: 5728-5738
    Depositing User: Helen Garner
    Date Deposited: 02 Aug 2016 16:11
    Last Modified: 18 Mar 2021 00:40

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