Band anticrossing and luminescence emission in dilute InAs1−x−yNxSby quaternary alloys

In this paper, we calculate the luminescence of the dilute quaternary InAs1-x-yNxSby semiconductor using a microscopic approach. The theory starts with the band anticrossing model applied to both conduction and the valence band to generate input for analytical approximations that lead to luminescence spectra, including relevant many body effects. Direct application of the equations leads to good agreement with recently measured experimental data.