Graded-Bandgap solar cells using all-electrodeposited ZnS, CdS and CdTe thin-films

ECHENDU, Obi and DHARMADASA, I (2015). Graded-Bandgap solar cells using all-electrodeposited ZnS, CdS and CdTe thin-films. Energies, 8 (5), 4416-4435.

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A 3-layer graded-bandgap solar cell with glass/FTO/ZnS/CdS/CdTe/Au structure has been fabricated using all-electrodeposited ZnS, CdS and CdTe thin layers. The three semiconductor layers were electrodeposited using a two-electrode system for process simplification. The incorporation of a wide bandgap amorphous ZnS as a buffer/window layer to form glass/FTO/ZnS/CdS/CdTe/Au solar cell resulted in the formation of this 3-layer graded-bandgap device structure. This has yielded corresponding improvement in all the solar cell parameters resulting to a conversion efficiency >10% under AM1.5 illumination conditions at room temperature, compared to a 2-layer glass/FTO/CdS/CdTe/Au reference solar cell structure with an efficiency of 8.0%. These results demonstrate the advantages of the multi-layer graded-bandgap device architecture over the conventional 2-layer structure. In addition, they demonstrate the effective application of the two-electrode system as a simplification to the conventional three-electrode system in the electrodeposition of semiconductors with the elimination of the reference electrode as a possible impurity source.

Item Type: Article
Research Institute, Centre or Group - Does NOT include content added after October 2018: Materials and Engineering Research Institute > Advanced Coatings and Composites Research Centre > Electronic Materials and Sensors Research Group
Identification Number:
Page Range: 4416-4435
Depositing User: Margaret Boot
Date Deposited: 22 Jul 2016 10:13
Last Modified: 18 Mar 2021 04:01

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