Multi Fermi level pinning at metal/Cu(InGa)(SeS)(2) interfaces

DHARMADASA, I, CHAURE, N. B., SAMANTILLEKE, A. P. and HASSAN, A. K. (2008). Multi Fermi level pinning at metal/Cu(InGa)(SeS)(2) interfaces. Solar energy materials and solar cells, 92 (8), 923-928.

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Metal contacts to chemically etched Cu(InGa)(SeS)(2) layers have been investigated using current-voltage and capacitance-voltage techniques. Oxidising chemicals enhance the Fermi level pinning at metal/Cu(InGa)(SeS)2 interfaces. The formation of a Schottky barrier at metal/p-Cu(InGa)(SeS)2 interface is dominated by Fermi level pinning at one of the four levels, 0.77 +/- 0.02, 0.84 +/- 0.02, 0.93 +/- 0.02 and 1.03 +/- 0.02 eV above the valence band maximum. These observed levels determined from current-voltage measurements show a good agreement with some of the previously published photoluminescence, deep level transient spectroscopy and photo acoustic spectroscopy observations. The capacitance-voltage measurements showed that this material has near ideal doping concentration of 1.0 X 10(16) cm(-3) for fabricating solar cell devices. (c) 2008 Elsevier BY. All rights reserved.

Item Type: Article
Research Institute, Centre or Group - Does NOT include content added after October 2018: Materials and Engineering Research Institute > Advanced Coatings and Composites Research Centre > Electronic Materials and Sensors Research Group
Identification Number:
Page Range: 923-928
Depositing User: Ann Betterton
Date Deposited: 08 Mar 2010 17:00
Last Modified: 18 Mar 2021 10:00

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