CORATGER, R., GIRARDIN, C., BEAUVILLAIN, J., DHARMADASA, I, SAMANTHILAKE, A. P., FROST, J. E. F., PRIOR, K. A. and CAVENETT, B. C. (1997). Schottky barrier formation at metal/n-ZnSe interfaces and characterization of Au/n-ZnSe by ballistic electron emission microscopy. Journal of Applied Physics, 81 (12), 7870-7875.
Full text not available from this repository.Abstract
Current transport and ballistic electron emission microscopy (BEEM) studies have been carried out on metal contacts fabricated on chemically etched n-ZnSe epitaxial layers grown by molecular beam epitaxy. The contact materials Ag, Sb, Au, Ge/Au, Sn, Ni, and Pd form one or more barrier heights out of the following seven discrete values: 0.90, 1.20, 1.32, 1.50, 1.67, 1.80, and 2.10+/-0.04 eV observed to date. BEEM work carried out on Au/n-ZnSe systems has identified four levels 1.32 [Morgan et al., J. Appl. Phys. 79, 1532 (1996)], 1.50, 1.67 [Coratger et al., Phys. Rev. B 15, 2357 (1995)] and 1.80 eV to date, confirming Fermi-level pinning at different positions. Schottky barrier formation at metal/n-ZnSe systems cannot be explained by the simple Schottky model. The strong Fermi-level pinning observed could be due to bulk and/or surface defects of the ZnSe material. (C) 1997 American Institute of Physics.
Item Type: | Article |
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Research Institute, Centre or Group - Does NOT include content added after October 2018: | Materials and Engineering Research Institute > Advanced Coatings and Composites Research Centre > Electronic Materials and Sensors Research Group |
Identification Number: | https://doi.org/10.1063/1.365395 |
Page Range: | 7870-7875 |
Depositing User: | Ann Betterton |
Date Deposited: | 08 Mar 2010 17:20 |
Last Modified: | 18 Mar 2021 22:15 |
URI: | https://shura.shu.ac.uk/id/eprint/1249 |
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