Items where Author is "Young, J."
Number of items: 8.
CHAURE, N. B., SAMANTILLEKE, A. P., BURTON, R. P., YOUNG, J. and DHARMADASA, I
(2005).
Electrodeposition of p(+), p, i, n and n(+)-type copper indium gallium diselenide for development of multilayer thin film solar cells.
Thin Solid Films, 472 (1-2), 212-216.
CHAURE, N. B., YOUNG, J., SAMANTILLEKE, A. P. and DHARMADASA, I
(2004).
Electrodeposition of p-i-n type CuInSe2 multilayers for photovoltaic applications.
Solar energy materials and solar cells, 81 (1), 125-133.
DHARMADASA, I, CHAURE, N. B., YOUNG, J., SAMANTILLEKE, A. P. and DELSOL, T.
(2003).
Reply to Comment on 'New ways of developing glass conducting glass CdS/CdTe metal thin-film solar cells based on a new model', by Dharmadasa et al 2002 Semicond. Sci. Technol 17 1238-48.
Semiconductor Science and Technology, 18 (8), 813-816.
DHARMADASA, I, SAMANTILLEKE, A. P., CHAURE, N. B. and YOUNG, J.
(2002).
New ways of developing glass/conducting glass/CdS/CdTe/metal thin-film solar cells based on a new model.
Semiconductor Science and Technology, 17 (12), 1238-1248.
DHARMADASA, I, SAMANTILLEKE, A. P., YOUNG, J., BOYLE, M. H., BACEWICZ, R. and WOLSKA, A.
(1999).
Electrodeposited p-type and n-type ZnSe layers for light emitting devices and multi-layer tandem solar cells.
Journal of Materials Science: Materials in Electronics, 10 (5-6), 441-445.
SAMANTILLEKE, A. P., BOYLE, M. H., YOUNG, J. and DHARMADASA, I
(1998).
Electrodeposition of n-type and p-type ZnSe thin films for applications in large area optoelectronic devices.
Journal of Materials Science: Materials in Electronics, 9 (4), 289-290.
SAMANTILLEKE, A. P., BOYLE, M. H., YOUNG, J. and DHARMADASA, I
(1998).
Growth of n-type and p-type ZnSe thin films using an electrochemical technique for applications in large area optoelectronic devices.
Journal of Materials Science: Materials in Electronics, 9 (3), 231-235.
DHARMADASA, I, BLOMFIELD, C. J., GREGORY, G. E. and YOUNG, J.
(1994).
Influence of chemical etching on metal contacts to II-VI compounds: CdTe and ZnSe.
International journal of electronics, 76 (5), 961-967.