Items where Author is "Vernon-Parry, K. D."
Number of items: 6.
VERNON-PARRY, K. D., EVANS-FREEMAN, J. H., MITROMARA, N. and MAY, P. W.
(2008).
High Resolution Deep Level Transient Spectroscopy of p-n diodes formed from p-type polycrystalline diamond on n-type silicon.
In: Conference on Optoelectronic and Microelectronic Materials and Devices, Sydney, Australia, Jul 28-Sep 01, 2008.
VERNON-PARRY, K. D., EVANS-FREEMAN, J. H. and DAWSON, P.
(2008).
The effect of hole confinement on photoluminescence from Er in SiGe/Si quantum wells.
Materials Science and Engineering B, 146 (1-3), 231-235.
EVANS-FREEMAN, J. H., EMIROGLU, D., GAD, M. A., MITROMARA, N. and VERNON-PARRY, K. D.
(2006).
Deep electronic states in ion-implanted Si.
Journal of materials science.
LEACH, C. and VERNON-PARRY, K. D.
(2006).
The effect of sintering temperature on the development of grain boundary traps in zinc oxide based varistors.
Journal of Materials Science, 41 (12), 3815-3819.
VERNON-PARRY, K. D., DAVIES, G. and GALLOWAY, S.
(2004).
Electronic and structural properties of grain boundaries in electron-irradiated edge-defined film-fed growth silicon.
Semiconductor science and technology.
VERNON-PARRY, K. D., EVANS-FREEMAN, J., HAWKINS, I. D., DAWSON, P. and PEAKER, A. R.
(2001).
Effect of dislocations on the photoluminescence decay of 1.54 μm emission from erbium-doped silicon.
Journal of applied physics, 89 (5), 2715-2719.