Items where Author is "Abdelgader, N."

ABDELGADER, N. and EVANS-FREEMAN, J. H. (2003). High resolution electrical studies of vacancy-rich and interstitial-rich regions in ion-implanted silicon. Physical review E, 67 (6), 061703.

EVANS-FREEMAN, J. H., ABDELGADER, N. and KAN, P. Y. Y. (2002). High resolution deep level transient spectroscopy studies of the vacancy-oxygen and related defects in ion-implanted silicon. Journal of applied physics, 92 (7), 3755-3760.