Transport mechanisms in porous silicon

RAY, A. K., MABROOK, M. F., NABOK, A. V. and BROWN, S. (1998). Transport mechanisms in porous silicon. Journal of Applied Physics, 84 (6), 3232-3235.

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Abstract

The current transport mechanism through porous silicon (PS) films fabricated from 8 to 12 Omega cm p-type silicon (p-Si) substrates has been investigated using current-voltage I(V) measurements on metal/PS/p-Si/metal devices in the temperature range of 77-300 K. The characteristics for all devices show a rectifying behavior with ideality factor very close to unity. A value of 0.7 eV is obtained for the barrier height at the interface between PS and bulk p-Si at room temperature and the barrier height is found to increase with rising temperature. A band model is proposed in order to explain the observed characteristics. (C) 1998 American Institute of Physics.

Item Type:	Article
Research Institute, Centre or Group - Does NOT include content added after October 2018:	Materials and Engineering Research Institute > Advanced Coatings and Composites Research Centre > Electronic Materials and Sensors Research Group
Identification Number:	https://doi.org/10.1063/1.368476
Page Range:	3232-3235
Depositing User:	Ann Betterton
Date Deposited:	30 Mar 2010 16:41
Last Modified:	18 Mar 2021 21:30
URI:	https://shura.shu.ac.uk/id/eprint/1445

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