Deep electronic states in ion-implanted Si

EVANS-FREEMAN, J. H., EMIROGLU, D., GAD, M. A., MITROMARA, N. and VERNON-PARRY, K. D. (2006). Deep electronic states in ion-implanted Si. Journal of materials science.

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    Link to published version:: 10.1007/s10853-006-6597-5

    Abstract

    In this paper we present an overview of the deep states present after ion-implantation by various species into n-type silicon, measured by Deep Level Transient Spectroscopy (DLTS) and high resolution Laplace DLTS (LDLTS). Both point and small extended defects are found, prior to any anneal, which can therefore be the precursors to more detrimental defects such as end of range loops. We show that the ion mass is linked to the concentrations of defects that are observed, and the presence of small interstitial clusters directly after ion implantation is established by comparing their behaviour with that of electrically active stacking faults. Finally, future applications of the LDLTS technique to ion-implanted regions in Si-based devices are outlined.

    Item Type: Article
    Additional Information: © Springer. Original publication is available at www.springerlink.com
    Research Institute, Centre or Group: Materials and Engineering Research Institute > Thin Films Research Centre > Electronic Materials and Sensors Research Group
    Identification Number: 10.1007/s10853-006-6597-5
    Depositing User: Ann Betterton
    Date Deposited: 22 Jun 2007
    Last Modified: 21 Dec 2010 11:33
    URI: http://shura.shu.ac.uk/id/eprint/981

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