Resistivity network and structural model of the oxide cathode for CRT application

HASHIM, A. A., BARRATT, D. S., HASSAN, A. K., EVANS-FREEMAN, J. H. and NABOK, A. (2006). Resistivity network and structural model of the oxide cathode for CRT application. Journal of display technology, 2 (2), 186-93.

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    Link to published version:: 10.1109/JDT.2006.874506

    Abstract

    In this paper, the electrical properties of oxide cathode and oxide cathode plus, supplied by LG Philips Displays, have been investigated in relation to different cathode activation regimes and methods. Oxide cathode activation treatment for different durations has been investigated. The formations of the compounds associated to the diffusion of reducing elements (Mg, Al, and W) to the Ni cap surface of oxide cathode were studied by a new suggestion method. Scanning electron microscopy (SEM) coupled with energy dispersive X-ray spectroscopy (EDX) was used as analytical techniques.

    Al, W, and Mg doping elements take place during heating to 1080 K (Ni-Brightness) under a rich controlled Ba–SrO atmosphere through an acceleration life test. The chemical transport of these elements was occurred mainly by the Ni cap grain boundary mechanism with significant pile-up of Mg compounds. Al and W show a superficial concentrations and distribution.

    A new structural and resistivity network model of oxide cathode plus are suggested. The new structural model shows a number of metallic and metallic oxide pathways are exist at the interface or extended through the oxide coating. The effective values of the resistances and the type of the equivalent circuit in the resistivity network model are temperature and activation time dependent.

    Item Type: Article
    Additional Information: ©2006 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE.
    Research Institute, Centre or Group: Materials and Engineering Research Institute > Thin Films Research Centre > Electronic Materials and Sensors Research Group
    Identification Number: 10.1109/JDT.2006.874506
    Depositing User: Ann Betterton
    Date Deposited: 31 Jul 2007
    Last Modified: 21 Dec 2010 11:33
    URI: http://shura.shu.ac.uk/id/eprint/980

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