Simulations of mid infrared emission of InAsN semiconductors

ORIAKU, C. I. and PEREIRA, Mauro (2015). Simulations of mid infrared emission of InAsN semiconductors. Optical and Quantum Electronics, 47 (4), 829-834.

[img]
Preview
PDF
Pereira_Simulation_of_mid_infrared_emission_of_dilute_nitride_semiconductors.pdf - Accepted Version
All rights reserved.

Download (182kB) | Preview
Official URL: http://dx.doi.org/10.1007/s11082-014-0002-4
Link to published version:: https://doi.org/10.1007/s11082-014-0002-4
Related URLs:

    Abstract

    This paper delivers an approximation to the complex many body problem of luminescence in semiconductors to the case of mid infrared luminescence of dilute nitrides. The results are compared with recent experimental data for InAsN semiconductors.

    Item Type: Article
    Research Institute, Centre or Group - Does NOT include content added after October 2018: Materials and Engineering Research Institute > Thin Films Research Centre > Electronic Materials and Sensors Research Group
    Identification Number: https://doi.org/10.1007/s11082-014-0002-4
    Page Range: 829-834
    Depositing User: Hilary Ridgway
    Date Deposited: 27 Mar 2015 10:58
    Last Modified: 16 Nov 2018 12:43
    URI: http://shura.shu.ac.uk/id/eprint/9583

    Actions (login required)

    View Item View Item

    Downloads

    Downloads per month over past year

    View more statistics