Simulations of mid infrared emission of InAsN semiconductors

ORIAKU, C. I. and PEREIRA, Mauro (2015). Simulations of mid infrared emission of InAsN semiconductors. Optical and Quantum Electronics, 47 (4), 829-834.

Pereira_Simulation_of_mid_infrared_emission_of_dilute_nitride_semiconductors.pdf - Accepted Version
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    This paper delivers an approximation to the complex many body problem of luminescence in semiconductors to the case of mid infrared luminescence of dilute nitrides. The results are compared with recent experimental data for InAsN semiconductors.

    Item Type: Article
    Research Institute, Centre or Group - Does NOT include content added after October 2018: Materials and Engineering Research Institute > Advanced Coatings and Composites Research Centre > Electronic Materials and Sensors Research Group
    Identification Number:
    Page Range: 829-834
    Depositing User: Hilary Ridgway
    Date Deposited: 27 Mar 2015 10:58
    Last Modified: 18 Mar 2021 07:52

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