Simulations of mid infrared emission of InAsN semiconductors

ORIAKU, C. I. and PEREIRA, Mauro (2015). Simulations of mid infrared emission of InAsN semiconductors. Optical and Quantum Electronics, 47 (4), 829-834.

Pereira_Simulation_of_mid_infrared_emission_of_dilute_nitride_semiconductors.pdf - Accepted Version
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Link to published version:: 10.1007/s11082-014-0002-4


This paper delivers an approximation to the complex many body problem of luminescence in semiconductors to the case of mid infrared luminescence of dilute nitrides. The results are compared with recent experimental data for InAsN semiconductors.

Item Type: Article
Research Institute, Centre or Group: Materials and Engineering Research Institute > Thin Films Research Centre > Electronic Materials and Sensors Research Group
Identification Number: 10.1007/s11082-014-0002-4
Depositing User: Hilary Ridgway
Date Deposited: 27 Mar 2015 10:58
Last Modified: 19 Oct 2016 23:49

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