Mid infrared luminescence of dilute nitride semiconductors : microscopic approach vs experiments

ORIAKU, C.I. and PEREIRA, Mauro (2014). Mid infrared luminescence of dilute nitride semiconductors : microscopic approach vs experiments. In: RAZEGHI, Manijeh, BARANOV, Alexei N., ZAVADA, John M. and PAVLIDIS, Dimitris, (eds.) Terahertz Emitters, Receivers, and Applications V. Proceedings SPIE (9199). SPIE - International Society for Optical Engineering, p. 919910.

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Official URL: http://dx.doi.org/10.1117/12.2062018
Link to published version:: https://doi.org/10.1117/12.2062018
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    Abstract

    In this paper, analytical expressions for optical nonlinearities are applied in the simulations of the absorption and photoluminescence of mid infrared materials. The fast and efficient approximations reproduce recent experimental data for dilute nitride semiconductors with very good agreement.

    Item Type: Book Section
    Research Institute, Centre or Group - Does NOT include content added after October 2018: Materials and Engineering Research Institute > Thin Films Research Centre > Electronic Materials and Sensors Research Group
    Identification Number: https://doi.org/10.1117/12.2062018
    Page Range: p. 919910
    Depositing User: Hilary Ridgway
    Date Deposited: 04 Mar 2015 10:31
    Last Modified: 17 Oct 2018 08:20
    URI: http://shura.shu.ac.uk/id/eprint/9512

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