Interface recombination in GaAs-GaAlAs quantum

SERMAGE, B., PEREIRA, Mauro, ALEXANDRE, F., BEERENS, J., AZOULAY, R., TALLOT, C., JEAN-LOUIS, A. M. and MEICHENIN, D. (1987). Interface recombination in GaAs-GaAlAs quantum. Le Journal de Physique Colloques, 48 (C5), C5-135.

Full text not available from this repository.
Official URL: http://dx.doi.org/10.1051/jphyscol:1987525
Link to published version:: 10.1051/jphyscol:1987525

Abstract

Non radiative carriers lifetime has been studied in MBE and MOCVD grown GaAs-GaAlAs undoped double heterostructures by luminescence decay technique. Interface recombination velocity is obtained by studying series of samples with different GaAs layer thicknesses d (between 1 µm and 20 Å). For each series S is constant when d is larger than 200 Å. When d is smaller than 200 Å, S increases due to the increase of the leaking of the carriers wave functions in the barrier when the well thickness decreases.

Item Type: Article
Research Institute, Centre or Group: Materials and Engineering Research Institute > Thin Films Research Centre > Electronic Materials and Sensors Research Group
Identification Number: 10.1051/jphyscol:1987525
Depositing User: Helen Garner
Date Deposited: 12 Dec 2014 16:10
Last Modified: 12 Dec 2014 16:10
URI: http://shura.shu.ac.uk/id/eprint/9035

Actions (login required)

View Item View Item

Downloads

Downloads per month over past year

View more statistics