SERMAGE, B., PEREIRA, Mauro, ALEXANDRE, F., BEERENS, J., AZOULAY, R., TALLOT, C., JEAN-LOUIS, A. M. and MEICHENIN, D. (1987). Interface recombination in GaAs-GaAlAs quantum. Le Journal de Physique Colloques, 48 (C5), C5-135.Full text not available from this repository.
Non radiative carriers lifetime has been studied in MBE and MOCVD grown GaAs-GaAlAs undoped double heterostructures by luminescence decay technique. Interface recombination velocity is obtained by studying series of samples with different GaAs layer thicknesses d (between 1 µm and 20 Å). For each series S is constant when d is larger than 200 Å. When d is smaller than 200 Å, S increases due to the increase of the leaking of the carriers wave functions in the barrier when the well thickness decreases.
|Research Institute, Centre or Group:||Materials and Engineering Research Institute > Thin Films Research Centre > Electronic Materials and Sensors Research Group|
|Depositing User:||Helen Garner|
|Date Deposited:||12 Dec 2014 16:10|
|Last Modified:||12 Dec 2014 16:10|
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