Interface recombination in GaAs-GaAlAs quantum

SERMAGE, B., PEREIRA, Mauro, ALEXANDRE, F., BEERENS, J., AZOULAY, R., TALLOT, C., JEAN-LOUIS, A. M. and MEICHENIN, D. (1987). Interface recombination in GaAs-GaAlAs quantum. Le Journal de Physique Colloques, 48 (C5), C5-135.

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    Non radiative carriers lifetime has been studied in MBE and MOCVD grown GaAs-GaAlAs undoped double heterostructures by luminescence decay technique. Interface recombination velocity is obtained by studying series of samples with different GaAs layer thicknesses d (between 1 µm and 20 Å). For each series S is constant when d is larger than 200 Å. When d is smaller than 200 Å, S increases due to the increase of the leaking of the carriers wave functions in the barrier when the well thickness decreases.

    Item Type: Article
    Research Institute, Centre or Group - Does NOT include content added after October 2018: Materials and Engineering Research Institute > Thin Films Research Centre > Electronic Materials and Sensors Research Group
    Identification Number:
    Page Range: C5-135
    Depositing User: Helen Garner
    Date Deposited: 12 Dec 2014 16:10
    Last Modified: 18 Mar 2021 19:00

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