FARAJI, Masoumeh and KHALILPOUR, Hamid (2014). Effect of phosphorous inoculation on creep behavior of a hypereutectic Al-Si alloy. Journal of Materials Engineering and Performance, 23 (10), 3467-3473.Full text not available from this repository.
Creep behavior of Al-Si hypereutectic alloys inoculated with phosphorus was investigated using the impression creep testing. The results showed that at stress regimes of up to 400-450 MPa and temperatures up to 300 A degrees C, no significant creep deformation occurred in both uninoculated and inoculated specimens; however, at temperatures above 300 A degrees C, the inoculated alloys presented better creep properties. Creep data were used to calculate the stress exponent of steady-state creep rate, n, and creep activation energy, Q, for different additive conditions where n was found varied between 5 and 8. Owing to the fact that most alloys have lower values for n (4, 5), threshold stress was estimated for studied conditions. The creep governing mechanisms for different conditions are discussed here, with a particular attention to the effect of phosphorous addition on the microstructural features, including number of primary silicon particles, mean primary silicon spacing, and morphology and distribution of eutectic silicon.
|Research Institute, Centre or Group:||Materials and Engineering Research Institute > Materials Analysis and Research Services|
|Depositing User:||Ann Betterton|
|Date Deposited:||05 Dec 2014 16:25|
|Last Modified:||05 Dec 2014 16:25|
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