Bias stress effect on high mobility-hysteresis free pentacene-based organic thin film transistors

FAKHER, S.J., HASSAN, Aseel and MABROOK, M.F. (2014). Bias stress effect on high mobility-hysteresis free pentacene-based organic thin film transistors. Synthetic Metals, 191, 53-58.

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Link to published version:: https://doi.org/10.1016/j.synthmet.2014.02.016
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    Abstract

    Fabrication and characterisation of pentacene-based top contact organic thin film transistors (OTFTs) with poly(methyl methacrylate) (PMMA) as the dielectric layer have been investigated. Stability of OTFTs was also investigated as devices were retested after 12 months of fabrication. The effects of bias stress on the OTFTs are studied and modelled for different stress conditions (different gate and drain bias stress measurements and stress times). The effects of bias stress have been expressed in terms of the shift in threshold voltage Delta V-T for a given stress condition. The shifts in threshold voltage has been analysed for different gate-source and drain-source voltages. The devices have demonstrated a negligible hysteresis in both the transfer and output characteristics of the OTFTs due to application of stress voltage, indicating traps-free interface between the pentacene and PMMA.

    Item Type: Article
    Research Institute, Centre or Group - Does NOT include content added after October 2018: Materials and Engineering Research Institute > Thin Films Research Centre > Electronic Materials and Sensors Research Group
    Identification Number: https://doi.org/10.1016/j.synthmet.2014.02.016
    Page Range: 53-58
    Depositing User: Ann Betterton
    Date Deposited: 05 Dec 2014 16:07
    Last Modified: 13 Jun 2017 13:24
    URI: http://shura.shu.ac.uk/id/eprint/8934

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