Exciton binding energies in semiconductor superlattices: An anisotropic-effective-medium approach

PEREIRA, Mauro, GALBRAITH, I., KOCH, S. and DUGGAN, G. (1990). Exciton binding energies in semiconductor superlattices: An anisotropic-effective-medium approach. Physical Review B, 42 (11), 7084-7089.

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Official URL: http://dx.doi.org/10.1103/PhysRevB.42.7084
Link to published version:: https://doi.org/10.1103/PhysRevB.42.7084
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    Abstract  Excitons in a semiconductor superlattice are studied via an envelope-function approach on the scale of the superlattice period. The superlattice is modeled as an anisotropic medium characterized by effective masses parallel and perpendicular to the plane of the layers. The perpendicular mass is shown to depend on the miniband dispersion and the resultant anisotropic exciton problem is solved variationally. An analytic expression for the ground-state binding energy is obtained and evaluated for a variety of structures in the GaAs/Al x Ga 1-x As system.

    Item Type: Article
    Research Institute, Centre or Group - Does NOT include content added after October 2018: Materials and Engineering Research Institute > Advanced Coatings and Composites Research Centre > Electronic Materials and Sensors Research Group
    Identification Number: https://doi.org/10.1103/PhysRevB.42.7084
    Page Range: 7084-7089
    Depositing User: Helen Garner
    Date Deposited: 19 Nov 2014 11:50
    Last Modified: 18 Mar 2021 19:00
    URI: https://shura.shu.ac.uk/id/eprint/8816

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