Exciton binding energies in semiconductor superlattices: An anisotropic-effective-medium approach

PEREIRA, Mauro, GALBRAITH, I., KOCH, S. and DUGGAN, G. (1990). Exciton binding energies in semiconductor superlattices: An anisotropic-effective-medium approach. Physical Review B, 42 (11), 7084-7089.

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Official URL: http://dx.doi.org/10.1103/PhysRevB.42.7084
Link to published version:: 10.1103/PhysRevB.42.7084

Abstract

Abstract  Excitons in a semiconductor superlattice are studied via an envelope-function approach on the scale of the superlattice period. The superlattice is modeled as an anisotropic medium characterized by effective masses parallel and perpendicular to the plane of the layers. The perpendicular mass is shown to depend on the miniband dispersion and the resultant anisotropic exciton problem is solved variationally. An analytic expression for the ground-state binding energy is obtained and evaluated for a variety of structures in the GaAs/Al x Ga 1-x As system.

Item Type: Article
Research Institute, Centre or Group: Materials and Engineering Research Institute > Thin Films Research Centre > Electronic Materials and Sensors Research Group
Identification Number: 10.1103/PhysRevB.42.7084
Depositing User: Helen Garner
Date Deposited: 19 Nov 2014 11:50
Last Modified: 19 Nov 2014 11:50
URI: http://shura.shu.ac.uk/id/eprint/8816

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